JVC085T Datasheet and Replacement
Type Designator: JVC085T
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 173 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 126 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 1048 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0057 Ohm
Package: TO220
JVC085T substitution
JVC085T Datasheet (PDF)
jvc085t.pdf

JVC085T80V 4.5mW N-Ch Power MOSFETFeaturesProduct SummaryParameter Typ. Unit Ultra-low RDS(ON) VDS80 V Low Gate Charge VGS(th)3.0 V 100% UIS Tested, 100% Rg Tested ID (@ VGS = 10V) (1) 126 A RDS(ON) (@ VGS = 10V) Pb-free Lead Plating 4.5 mW Halogen-free and RoHS-compliantApplications Power Management in Computing, CE, IE 4.0, Communications
Datasheet: JVE103T , JVL101N , JVL102E , JVL102T , JVL102Y , JMTV3400A , JMTY11DN10A , JMTY2310A , NCEP15T14 , JVC103K , JVC103T , JVC105E , JVC113T , JVC502E , SLA08N10G , SLA10N03T , SLB60R105E7D .
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