All MOSFET. SLA08N10G Datasheet

 

SLA08N10G Datasheet and Replacement


   Type Designator: SLA08N10G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.9 A
   Tj ⓘ - Maximum Junction Temperature: 155 °C
   tr ⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 215 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
   Package: TDFN2X2
 

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SLA08N10G Datasheet (PDF)

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SLA08N10G

SLA08N10G100V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 5.9A, 100V, RDS(on),Typ = 29mShielding Gate MOSFET technology This advanced technol- Low gate charge (Qg,typ = 7.2nC)ogy has been especially tailored to minimize on-state resis- Fast switchingtance, provide superior switching performance, and withstand

Datasheet: JMTY11DN10A , JMTY2310A , JVC085T , JVC103K , JVC103T , JVC105E , JVC113T , JVC502E , 75N75 , SLA10N03T , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , SLD110N02TB , SLD120N03TB .

History: SLU4N65U | 2SK2876-01MR | BUK436-200A | UT3N06G-AE3

Keywords - SLA08N10G MOSFET datasheet

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