SLA08N10G PDF and Equivalents Search

 

SLA08N10G Specs and Replacement

Type Designator: SLA08N10G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 5.9 A

Tj ⓘ - Maximum Junction Temperature: 155 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3 nS

Cossⓘ - Output Capacitance: 215 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm

Package: TDFN2X2

SLA08N10G substitution

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SLA08N10G datasheet

 ..1. Size:2375K  maple semi
 sla08n10g.pdf pdf_icon

SLA08N10G

SLA08N10G 100V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 5.9A, 100V, RDS(on),Typ = 29m Shielding Gate MOSFET technology This advanced technol- Low gate charge (Qg,typ = 7.2nC) ogy has been especially tailored to minimize on-state resis- Fast switching tance, provide superior switching performance, and withstand ... See More ⇒

Detailed specifications: JMTY11DN10A, JMTY2310A, JVC085T, JVC103K, JVC103T, JVC105E, JVC113T, JVC502E, 75N75, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, SLD10N65U, SLD110N02TB, SLD120N03TB

Keywords - SLA08N10G MOSFET specs

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