All MOSFET. SLD110N02TB Datasheet

 

SLD110N02TB Datasheet and Replacement


   Type Designator: SLD110N02TB
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 60 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 106.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 520 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm
   Package: TO252
 

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SLD110N02TB Datasheet (PDF)

 ..1. Size:4779K  maple semi
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SLD110N02TB

SLD110N02TB20V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 106.5A, 20V, RDS(on),Typ = 2.4mTRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 52nC)pecially tailored to minimize conduction loss, provide superior Fast switchingswitching performance, and withstand high energy pulse

Datasheet: JVC502E , SLA08N10G , SLA10N03T , SLB60R105E7D , SLB65R380E7C , SLC013RN06G , SLD07RN10G , SLD10N65U , RU7088R , SLD120N03TB , SLD140N03TB , SLD40N03TB , SLD60N04TB , SLD65R1K2E7 , 24N6LG , 2SK737 , STF4N90K5 .

Keywords - SLD110N02TB MOSFET datasheet

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