SLD110N02TB PDF and Equivalents Search

 

SLD110N02TB Specs and Replacement

Type Designator: SLD110N02TB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 106.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 520 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0032 Ohm

Package: TO252

SLD110N02TB substitution

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SLD110N02TB datasheet

 ..1. Size:4779K  maple semi
 sld110n02tb.pdf pdf_icon

SLD110N02TB

SLD110N02TB 20V N-Channel MOSFET General Description Features This Power MOSFET is produced using Msemitek s advanced 106.5A, 20V, RDS(on),Typ = 2.4m TRENCH technology. This advanced technology has been es- Low gate charge (Qg,typ = 52nC) pecially tailored to minimize conduction loss, provide superior Fast switching switching performance, and withstand high energy pulse ... See More ⇒

Detailed specifications: JVC502E, SLA08N10G, SLA10N03T, SLB60R105E7D, SLB65R380E7C, SLC013RN06G, SLD07RN10G, SLD10N65U, IRFZ46N, SLD120N03TB, SLD140N03TB, SLD40N03TB, SLD60N04TB, SLD65R1K2E7, 24N6LG, 2SK737, STF4N90K5

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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