All MOSFET. SLF65R380E7C Datasheet

 

SLF65R380E7C Datasheet and Replacement


   Type Designator: SLF65R380E7C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 31 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO220F
 

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SLF65R380E7C Datasheet (PDF)

 ..1. Size:2495K  maple semi
 slf65r380e7c.pdf pdf_icon

SLF65R380E7C

SLF65R380E7C650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 11A*, 650V, RDS(on),Typ = 320mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switch

 7.1. Size:484K  maple semi
 slf65r300s2.pdf pdf_icon

SLF65R380E7C

SLF65R300S2650V N-channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis- 15A, 650V, RDS(on)typ= 0.26@VGS = 10 VAdvanced Super-Junction technology.- Low gate charge ( typical 24nC)This advanced technology has been especially tailored to- High ruggednessminimize conduction loss, provide superior switching- Fast switchingperformance, a

 8.1. Size:2126K  maple semi
 slf65r1k2e7.pdf pdf_icon

SLF65R380E7C

SLF65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

 8.2. Size:766K  maple semi
 slf65r950s2.pdf pdf_icon

SLF65R380E7C

SLF65R950S2650V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Maple semis - 5A, 650V, RDS(on) = 950m@VGS = 10 Vadvanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggednessto minimize on-state resistance, provide superior switching - Fast switchingperformance, and withstand h

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Datasheet: SLD65R1K2E7 , 24N6LG , 2SK737 , STF4N90K5 , SLF4N65SV , SLF65R180E7C , SLF65R1K2E7 , SLF65R280E7C , IRFP064N , SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , SLM160N04G .

History: MEM610 | RU60E16L

Keywords - SLF65R380E7C MOSFET datasheet

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