All MOSFET. 2SK3270-01 Datasheet

 

2SK3270-01 MOSFET. Datasheet pdf. Equivalent

Type Designator: 2SK3270-01

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 135 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm

Package: TO220AB

2SK3270-01 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2SK3270-01 Datasheet (PDF)

8.1. 2sk3278.pdf Size:30K _sanyo

2SK3270-01
2SK3270-01

Ordering number : ENN6680 2SK3278 N-Channel Silicon MOSFET 2SK3278 DC/DC Converter Applications Features Package Dimensions • Low ON-resistance. unit : mm • 4V drive. 2083B • Ultrahigh-speed switching. [2SK3278] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 : Gate 1 2 3 2 : Drain 3 : Source 4 : Drain 2.3 2.3 SANYO : TP unit : mm 2092B [2SK3278] 6.5 2.3 5.0 0.5 4

8.2. rej03g1098 2sk3274lsds.pdf Size:140K _renesas

2SK3270-01
2SK3270-01

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.3. 2sk3274.pdf Size:127K _renesas

2SK3270-01
2SK3270-01

2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features • Low on-resistance • RDS (on) = 10 mΩ typ. • 4.5 V gate drive device • High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (L)-(2) ) (Package name: DPAK (S) ) 4 D 2

8.4. 2sk3277.pdf Size:217K _panasonic

2SK3270-01
2SK3270-01

This product complies with the RoHS Directive (EU 2002/95/EC). Power MOSFETs 2SK3277 Silicon N-channel power MOSFET Unit: mm 6.5±0.1 ■ Features 2.3±0.1 5.3±0.1 4.35±0.1 • Avalanche energy capability guaranteed 0.5±0.1 • High-speed switching • No secondary breakdown ■ Applications 1.0±0.1 • Non-contact relay 0.1±0.05 0.5±0.1 • Solenoid drive 0.75±0.1 2.

 8.5. 2sk3272-01sj-01s-01l.pdf Size:355K _fuji

2SK3270-01
2SK3270-01

2SK3272-01L,S,SJ 200509 N-CHANNEL SILICON POWER MOSFET Trench Power MOSFET Outline Drawings Features High speed switching Low on-resistance No secondary breakdown Low driving power Avalanche-proof See to P4 Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Absolute maximum ratings (Tc=25°C unless otherwise s

8.6. 2sk3271-01.pdf Size:255K _fuji

2SK3270-01
2SK3270-01

N-channel MOS-FET 2SK3271-01 6,5mΩ Trench Gate MOSFET 60V ±100A 155W > Features > Outline Drawing - High Current - Low On-Resistance - No Secondary Breakdown - Low Driving Power - Avalanche Rated > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics > Equivalent Circuit - Absolute Maximum Ratings (TC=25°C),

Datasheet: 2SK3211 , 2SK3212 , 2SK3214 , 2SK3228 , 2SK3229 , 2SK3233 , 2SK3234 , 2SK3235 , IRF1404 , 2SK3271-01 , 2SK3272-01L , 2SK3272-01S , 2SK3273-01MR , 2SK3274 , 2SK3275-01L , 2SK3275-01S , 2SK3370 .

 

 
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