2SK3270-01 MOSFET. Datasheet pdf. Equivalent

N-channel MOS-FET2SK3270-016,5mTrench Gate MOSFET 60V 80A 135W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), u

isc N-Channel MOSFET Transistor 2SK3270-01FEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand sole

N-channel MOS-FET2SK3273-01MR6,5mTrench Gate MOSFET 60V 70A 70W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), u

Ordering number : ENN66802SK3278N-Channel Silicon MOSFET2SK3278DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2083B Ultrahigh-speed switching.[2SK3278]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3 SANYO : TPunit : mm2092B[2SK3278]6.5 2.35.0 0.54

2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features Low on-resistance RDS (on) = 10 m typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )4D2

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3277Silicon N-channel power MOSFETUnit: mm6.50.1 Features2.30.15.30.14.350.1 Avalanche energy capability guaranteed0.50.1 High-speed switching No secondary breakdown Applications1.00.1 Non-contact relay0.10.050.50.1 Solenoid drive 0.750.12.

2SK3272-01L,S,SJ200509N-CHANNEL SILICON POWER MOSFETTrench Power MOSFETOutline DrawingsFeaturesHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerAvalanche-proofSee to P4ApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless otherwise s

N-channel MOS-FET2SK3271-01 6,5mTrench Gate MOSFET 60V 100A 155W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),

isc N-Channel MOSFET Transistor 2SK3272SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3273FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK3273-01MRFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand so

isc N-Channel MOSFET Transistor 2SK3272-01SJFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

isc N-Channel MOSFET Transistor 2SK3272-01SFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

isc N-Channel MOSFET Transistor 2SK3271-01FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-

isc N-Channel MOSFET Transistor 2SK3272LFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK3271FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour

isc N-Channel MOSFET Transistor 2SK3278IFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK3278DFEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 36m(Max) @VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 22SK3272-01LFEATURESDrain Current : I = 80A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 6.5m(Max) @VGS= 40VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen