SLM160N04G Datasheet and Replacement
Type Designator: SLM160N04G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 54 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 1106 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: PDFN5X6
SLM160N04G substitution
SLM160N04G Datasheet (PDF)
slm160n04g.pdf

SLM160N04G40V N-Channel MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks advanced 160A, 40V, RDS(on),typ =1.2mShielding Gate MOSFET technology This advanced technol- Low gate charge (Qg,typ = 61nC)ogy has been especially tailored to minimize on-state resis- Fast switchingtance, provide superior switching performance, and withstand
Datasheet: SLF65R380E7C , SLF65R600E7C , SLF70R280E7C , SLF70R380E7C , SLF80R830GT , SLF8N65SV , SLM120N06G , SLM150N04G , IRF540N , SLP65R180E7C , SLP65R1K2E7 , SLP65R380E7C , SLP730S , SLT65R180E7C , SLT70R180E7C , SLU4N65U , SLD65R280E7C .
History: IXFK250N10P
Keywords - SLM160N04G MOSFET datasheet
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History: IXFK250N10P



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