SLT65R180E7C PDF and Equivalents Search

 

SLT65R180E7C Specs and Replacement

Type Designator: SLT65R180E7C

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 205 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 22 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 54 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: PTO252

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SLT65R180E7C datasheet

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SLT65R180E7C

SLT65R180E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 22A, 650V, RDS(on),Typ = 150m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 34nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒

Detailed specifications: SLF8N65SV, SLM120N06G, SLM150N04G, SLM160N04G, SLP65R180E7C, SLP65R1K2E7, SLP65R380E7C, SLP730S, IRF640, SLT70R180E7C, SLU4N65U, SLD65R280E7C, SLD65R380E7C, SLD65R600E7C, SLD80N02TB, SLD8N50UD, SLD8N65SV

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