SLD65R280E7C Specs and Replacement
Type Designator: SLD65R280E7C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 124 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 14 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 40 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO252
SLD65R280E7C substitution
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SLD65R280E7C datasheet
sld65r280e7c.pdf
SLD65R280E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 14A, 650V, RDS(on),Typ = 230m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 30nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒
sld65r380e7c.pdf
SLD65R380E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 11A, 650V, RDS(on),Typ = 320m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 22nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchi... See More ⇒
sld65r950s2.pdf
SLD65R950S2 650V N-Channel MOSFET General Description Features This Power MOSFET is produced using Maple semi s - 5A, 650V, RDS(on) = 950m @VGS = 10 V advanced planar stripe DMOS technology. - Low gate charge This advanced technology has been especially tailored - High ruggedness to minimize on-state resistance, provide superior switching - Fast switching performance, and withstand h... See More ⇒
sld65r600e7c.pdf
SLD65R600E7C 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 8.4A, 650V, RDS(on),Typ = 510m vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 13nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switch... See More ⇒
Detailed specifications: SLM160N04G, SLP65R180E7C, SLP65R1K2E7, SLP65R380E7C, SLP730S, SLT65R180E7C, SLT70R180E7C, SLU4N65U, IRFB4110, SLD65R380E7C, SLD65R600E7C, SLD80N02TB, SLD8N50UD, SLD8N65SV, SLD90N02TB, SLD90N03TB, SLD95R3K2GTZ
Keywords - SLD65R280E7C MOSFET specs
SLD65R280E7C cross reference
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SLD65R280E7C replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: IRLR7821CPBF | ZXMN6A08E6TA | IRHQ57110
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