SLD8N65SV PDF and Equivalents Search

 

SLD8N65SV Specs and Replacement

Type Designator: SLD8N65SV

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 198 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33 nS

Cossⓘ - Output Capacitance: 86 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.35 Ohm

Package: TO252

SLD8N65SV substitution

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SLD8N65SV datasheet

 ..1. Size:4841K  maple semi
 sld8n65sv.pdf pdf_icon

SLD8N65SV

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 9.1. Size:5144K  maple semi
 sld8n50ud.pdf pdf_icon

SLD8N65SV

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Detailed specifications: SLT65R180E7C, SLT70R180E7C, SLU4N65U, SLD65R280E7C, SLD65R380E7C, SLD65R600E7C, SLD80N02TB, SLD8N50UD, IRF3710, SLD90N02TB, SLD90N03TB, SLD95R3K2GTZ, SLE65R1K2E7, SLF10N65SV, SLF12N65SV, SLF16N65S, SLF95R760GTZ

Keywords - SLD8N65SV MOSFET specs

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