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SLE65R1K2E7 Specs and Replacement

Type Designator: SLE65R1K2E7

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 6.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 39 nS

Cossⓘ - Output Capacitance: 14 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: SOT223

SLE65R1K2E7 substitution

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SLE65R1K2E7 datasheet

 ..1. Size:2738K  maple semi
 sle65r1k2e7.pdf pdf_icon

SLE65R1K2E7

SLE65R1K2E7 650V N-Channel Multi-EPI Super-junction MOSFET General Description Features This power MOSFET is produced by using Msemitek s ad- 4.9A*, 650V, RDS(on),Typ = 1.0 vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC) technology has been especially tailored to minimize on-state High ruggedness resistance, provide superior switchin... See More ⇒

Detailed specifications: SLD65R380E7C, SLD65R600E7C, SLD80N02TB, SLD8N50UD, SLD8N65SV, SLD90N02TB, SLD90N03TB, SLD95R3K2GTZ, 2N7000, SLF10N65SV, SLF12N65SV, SLF16N65S, SLF95R760GTZ, SLH10RN20T, SLH60R043E7D, SLH60R075GTDI, SLH65R180E7C

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