All MOSFET. SLE65R1K2E7 Datasheet

 

SLE65R1K2E7 Datasheet and Replacement


   Type Designator: SLE65R1K2E7
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 6.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 39 nS
   Cossⓘ - Output Capacitance: 14 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm
   Package: SOT223
 

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SLE65R1K2E7 Datasheet (PDF)

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SLE65R1K2E7

SLE65R1K2E7650V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 4.9A*, 650V, RDS(on),Typ = 1.0vanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 8nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switchin

Datasheet: SLD65R380E7C , SLD65R600E7C , SLD80N02TB , SLD8N50UD , SLD8N65SV , SLD90N02TB , SLD90N03TB , SLD95R3K2GTZ , IRFP250N , SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C .

History: FIR10N20LG

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