SLH60R043E7D Datasheet and Replacement. Cross Reference Search

SLH60R043E7D Datasheet (PDF)

..1. Size:569K maple semi
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SLH60R043E7D600V N-Channel Multi-EPI Super-Junction MOSFETGeneral Description FeaturesThis Power MOSFET is produced using Msemiteks - 65A, 600V, RDS(on)Typ =36m@VGS = 10 Vadvanced Superjunction MOSFET technology. - Fast Recovery Body-DiodeThis advanced technology has been especially tailored - Ultra high ruggedness to minimize on-state resistance, provide superior switching - F

7.1. Size:511K maple semi
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SLH60R080SS 600V N-Channel MOSFET FeaturesGeneral Description Features - 47A, 600V, RDS(on) typ.= 68m@VGS =10 V This Power MOSFET is produced using Maple semis Advanced Super-Junction technology. - Low gate charge ( typical 88nC) - 7.6A, 500V, RDS(on) typ. = 0.5@VGS = 10 VThis advanced technology has been especially tailored - High ruggedness - Low gate charge ( typic

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SLH60R075GTDI600V N-Channel Multi-EPI Super-junction MOSFETGeneral Description FeaturesThis power MOSFET is produced by using Msemiteks ad- 46A, 600V, RDS(on),Typ = 67.5mvanced Super-junction MOSFET technology. This advanced Low gate charge (Qg,typ = 81nC)technology has been especially tailored to minimize on-state High ruggednessresistance, provide superior switc

Datasheet: SLD90N03TB , SLD95R3K2GTZ , SLE65R1K2E7 , SLF10N65SV , SLF12N65SV , SLF16N65S , SLF95R760GTZ , SLH10RN20T , AO3400 , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , MD25N50 , MD50N20 .