MD25N50 Specs and Replacement
Type Designator: MD25N50
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 320 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 25 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 75 nS
Cossⓘ - Output Capacitance: 350 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
Package: TO3PN
MD25N50 substitution
- MOSFET ⓘ Cross-Reference Search
MD25N50 datasheet
md25n50.pdf
Silicon N-Channel Power MOSFET Description MD25N50 the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. General Features V =500V, R ... See More ⇒
Detailed specifications: SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , IRLB4132 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P .
Keywords - MD25N50 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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