All MOSFET. MD25N50 Datasheet

 

MD25N50 Datasheet and Replacement


   Type Designator: MD25N50
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 320 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 25 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 75 nS
   Cossⓘ - Output Capacitance: 350 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.22 Ohm
   Package: TO3PN
 

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MD25N50 Datasheet (PDF)

 ..1. Size:826K  cn minos
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MD25N50

Silicon N-Channel Power MOSFETDescriptionMD25N50 the silicon N-channel Enhanced MOSFETs, is obtainedby advanced MOSFET technology which reduce the conduction loss,improve switching performance and enhance the avalanche energy.The transistor is suitable device for SMPS, high speed switching andgeneral purpose applications.General FeaturesV =500V, R

Datasheet: SLH10RN20T , SLH60R043E7D , SLH60R075GTDI , SLH65R180E7C , SLH95R130GTZ , SLI13N50C , MD100N20 , MD20N50 , IRLB4132 , MD50N20 , MD70N10 , MDT30P10D , MDT4N65 , MPF10N65 , MPG08N68P , MPG08N68S , MPG120N06P .

History: IRF9612 | WSF30100D | STB85NS04Z | HU5N50 | IRF737LCPBF | BLF6G10-160RN | 2SK2698

Keywords - MD25N50 MOSFET datasheet

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