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MD70N10 Specs and Replacement

Type Designator: MD70N10

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 200 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 70 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28 nS

Cossⓘ - Output Capacitance: 610 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm

Package: TO3PH

MD70N10 substitution

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MD70N10 datasheet

 ..1. Size:1158K  cn minos
 md70n10.pdf pdf_icon

MD70N10

Silicon N-Channel Power MOSFE Description The MD70N10 uses advanced technology and design to provide excellent R . It can be used in a wide variety DS(ON) of applications. General Features V =100V, R ... See More ⇒

Detailed specifications: SLH60R075GTDI, SLH65R180E7C, SLH95R130GTZ, SLI13N50C, MD100N20, MD20N50, MD25N50, MD50N20, K3569, MDT30P10D, MDT4N65, MPF10N65, MPG08N68P, MPG08N68S, MPG120N06P, MPG120N06S, MPG150N10P

Keywords - MD70N10 MOSFET specs

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