MP5N50 Datasheet and Replacement
Type Designator: MP5N50
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 57 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220
MP5N50 substitution
MP5N50 Datasheet (PDF)
mp5n50.pdf

Silicon N-Channel Power MOSFETDescriptionThe MP5N50 uses advanced technology and design to provideexcellent R . It can be used in a wide variety of applications.DS(ON)General FeaturesSchematic diagram V =500V,I =5ADS D Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy TestApplication Power switching application A
tmp5n50sg tmpf5n50sg.pdf

TMP5N50SG/TMPF5N50SGVDSS = 550 V @TjmaxFeaturesID = 4A Low gate chargeRDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen FreeAbs
tmp5n50 tmpf5n50.pdf

TMP5N50/TMPF5N50TMP5N50G/TMPF5N50GFeaturesVDSS = 550 V @Tjmax Low gate chargeID = 4.5A 100% avalanche testedRDS(ON) = 1.65 W(max) @ VGS= 10 V Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery DGSDevice Package Marking RemarkTMP5N50 / TMPF5N50 TO-220 / TO-220F TMP5N50 / TMPF5N50 RoHST
Datasheet: MPT035N08S , FTP06N06N , MD40N50 , MD50N50 , MDT35P10D , MDT40P10D , MDT80N06D , MP13N50 , 13N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P .
History: SGSP591 | 2SK2071-01L | WSP4409 | FDMS3602S | ELM34416AA | FDMS86103L | TPC8028
Keywords - MP5N50 MOSFET datasheet
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History: SGSP591 | 2SK2071-01L | WSP4409 | FDMS3602S | ELM34416AA | FDMS86103L | TPC8028



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