MPG100N06 Datasheet and Replacement
Type Designator: MPG100N06
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 143 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 100 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 345 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
Package: TO220
MPG100N06 substitution
MPG100N06 Datasheet (PDF)
mpg100n06 mdt100n06 mps100n06.pdf
Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R
mpg100n06p mpg100n06s.pdf
Silicon N-Channel Power MOSFETDescriptionThe MPG100N06 uses advanced trench technologyto provide excellent R , low gate charge. It can beDS(ON)used in a wide variety of applications.KEY CHARACTERISTICS V =60V,I =100A R
mpg100n07s mpg100n07p.pdf
DESCRIPTIONThe MPG100N07P uses advanced trenchtechnology to provide excellent R , low gateDS(ON)charge. It can be used in a wide variety ofapplications.KEY CHARACTERISTICSSchematic diagram V = 70V,I = 100ADS D R
mpg100n08p.pdf
80V N-Channel Power MOSFETDESCRIPTIONThe MPG100N08 uses advanced trench technology toprovide excellent R , low gate charge. It can be usedDS(ON)in a wide variety of applications.Feature Description V = 80V,I = 100A.DS DR = 5.8m (typ.) @ V = 10V.DS(ON) GSR = 8.6m (Max.) @ V = 10V.DS(ON) GS Schematic diagram Uses CRM(CQ) advanced Trench technology. Extreme
Datasheet: MDT35P10D , MDT40P10D , MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , IRFP250 , MDT100N06 , MPS100N06 , MPG160N04P , MPG30P10P , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S .
History: MDT100N06
Keywords - MPG100N06 MOSFET datasheet
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MPG100N06 replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: MDT100N06
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