All MOSFET. MPS100N06 Datasheet

 

MPS100N06 Datasheet and Replacement


   Type Designator: MPS100N06
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 143 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 100 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 345 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.007 Ohm
   Package: TO263
 

 MPS100N06 substitution

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MPS100N06 Datasheet (PDF)

 ..1. Size:222K  cn minos
 mpg100n06 mdt100n06 mps100n06.pdf pdf_icon

MPS100N06

Green ProductMPG100N0660VN-Channel Power MOSFETDESCRIPTION KEYCHARACTERISTICS V =60V,I =100ADS DThe MPG100N06 uses advanced trench technology to provide R

Datasheet: MDT80N06D , MP13N50 , MP5N50 , MPF4N65 , MPF7N65 , MPG100N03P , MPG100N06 , MDT100N06 , AO3401 , MPG160N04P , MPG30P10P , MPG40P10P , MPG50N06P , MPG55N06P , MPT028N10S , MPT037N08P , MPT037N08S .

History: MPG55N06P

Keywords - MPS100N06 MOSFET datasheet

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