MPG30N06P Datasheet. Specs and Replacement
Type Designator: MPG30N06P 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 44 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 6.4 nS
Cossⓘ - Output Capacitance: 76 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO220
MPG30N06P substitution
- MOSFET ⓘ Cross-Reference Search
MPG30N06P datasheet
mdt30n10d mpg30n10p.pdf
100V N-Channel Power MOSFET DESCRIPTION The MPG30N10 uses advanced trench technology toprovide excellent R , low gate charge. It can be used in a wide DS(ON) variety of applications. KEY CHARACTERISTICS V = 100V,I =30A DS D R ... See More ⇒
mpg30p10p.pdf
Silicon P-Channel Power MOSFET Description The MPG30P10P uses advanced technology and design to provide excellent RDS(ON) . It can be used in a wide variety of applications. General Features VDS=-100V, ID=-30A Low ON Resistance Low Reverse transfer capacitances 100% Single Pulse avalanche energy Test Application Power switching application Adapter and charger ... See More ⇒
Detailed specifications: MDP2N60, MDP5N65, MDP9N20, MDT08N06D, MPG180N10P, MPG180N10S, MPG200N08P, MPG200N08S, IRFP064N, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, MPG90N08P, MPG90N08S, MPT012N08T
Keywords - MPG30N06P MOSFET specs
MPG30N06P cross reference
MPG30N06P equivalent finder
MPG30N06P pdf lookup
MPG30N06P substitution
MPG30N06P replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
