MPG90N08P Datasheet. Specs and Replacement

Type Designator: MPG90N08P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 147 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 90 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 200 nS

Cossⓘ - Output Capacitance: 280 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: TO220

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MPG90N08P datasheet

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mpg90n08p mpg90n08s.pdf pdf_icon

MPG90N08P

80V N-Channel Power MOSFET DESCRIPTION The MPG90N08 uses advanced trench technology to provide excellent R , low gate charge. It can be used DS(ON) ina wide variety of applications. KEY CHARACTERISTICS V = 80V,I = 90A DS D R ... See More ⇒

Detailed specifications: MPG200N08P, MPG200N08S, MPG30N06P, MPG30N10P, MPG40N10P, MPG60N10P, MPG60NF06P, MPG80N06P, IRF840, MPG90N08S, MPT012N08T, MPT023N10T, MPT028N10P, MDT12N10L, MDT13N10D, MDT15N10, MDT15P04D

Keywords - MPG90N08P MOSFET specs

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