MPF5N65 Datasheet. Specs and Replacement
Type Designator: MPF5N65 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 63 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 23 nS
Cossⓘ - Output Capacitance: 87 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO220F
MPF5N65 substitution
- MOSFET ⓘ Cross-Reference Search
MPF5N65 datasheet
mpf5n65 mp5n65 mdp5n65 mdt5n65.pdf
650V N-Channel MOSFET FEATURES Fast switching 100% avalanche tested Improved dv/dt capability APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Device Marking and Package Information Device Package Marking MPF5N65 TO-220F MPF5N65 MP5N65 TO-220C 5N65 MDP5N65 TO-251 5N65 MDT5N65 TO-252 5N65 Absolute Maxim... See More ⇒
tmp5n60az tmpf5n60az.pdf
TMP5N60AZ(G)/TMPF5N60AZ(G) Features N-channel MOSFET Low gate charge BVDSS ID RDS(on) 100% avalanche tested 600V 4.2A ... See More ⇒
tmp5n60z tmpf5n60z.pdf
TMP5N60Z(G)/TMPF5N60Z(G) N-channel MOSFET Features BVDSS ID RDS(on) Low gate charge 600V 4.2A ... See More ⇒
tmp5n50sg tmpf5n50sg.pdf
TMP5N50SG/TMPF5N50SG VDSS = 550 V @Tjmax Features ID = 4A Low gate charge RDS(ON) = 1.85 W(max) @ VGS= 10 V 100% avalanche tested Improved dv/dt capability RoHS compliant Halogen free package JEDEC Qualification Fast reverse recovery D G S Device Package Marking Remark TMP5N50SG / TMPF5N50SG TO-220 / TO-220F TMP5N50SG / TMPF5N50SG Halogen Free Abs... See More ⇒
Detailed specifications: MDT30N10D, MDT40N06D, MDT40N10D, MDT50N06D, MPF2N60, MPF3N150, MPF40N25, MPF50N25, IRF630, MPF8N65, MPF9N20, MPG100N06P, MPG100N06S, MPG100N07P, MPG100N07S, MPG100N08P, MDT5N65
Keywords - MPF5N65 MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
