DMN3031LSS MOSFET. Datasheet pdf. Equivalent

   Type Designator: DMN3031LSS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.1 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Qgⓘ - Total Gate Charge: 16.7 nC
   Cossⓘ - Output Capacitance: 741 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.031 Ohm
   Package: SO8

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DMN3031LSS Datasheet (PDF)

..1. Size:179K diodes
dmn3031lss.pdf pdf_icon

DMN3031LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18.5m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 31m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

8.1. Size:153K diodes
dmn3033lsd.pdf pdf_icon

DMN3033LSDDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Dual N-Channel MOSFET Case: SOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 22m @ VGS = 10V Moisture Sensitivity: Level 1

8.2. Size:321K diodes
dmn3032le.pdf pdf_icon

DMN3032LE30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(on) max TA = +25C Low Input Capacitance 29m @ VGS = 10V 5.6A Fast Switching Speed 30V 35m @ VGS = 4.5V 4.8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Gre

8.3. Size:545K diodes
dmn3035lwn.pdf pdf_icon

DMN3035LWN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance ID MAX V(BR)DSS RDS(ON) MAX TA = +25C Low Input Capacitance 35m @ VGS = 10V 5.5A Fast Switching Speed 30V 45m @ VGS = 4.5V 4.9A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Descriptio

8.4. Size:272K diodes
dmn3030lfg.pdf pdf_icon

DMN3030LFGGreenN-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features ID Low RDS(ON) ensures on state losses are minimized V(BR)DSS RDS(ON) PackageTA = +25C Small form factor thermally efficient package enables higher 18m @ VGS = 10V POWERDI 8.6A density end products 30V 3333-8 27m @ VGS = 4.5V 5.5A Occupies just 33% of the boa

8.5. Size:397K diodes
dmn3033lsnq.pdf pdf_icon

DMN3033LSNQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low Gate Charge ID BVDSS RDS(on) max Low RDS(ON) TA = +25C Low Input/Output Leakage 6A 30m @ VGS = 10V 30V 40m @ VGS = 4.5V 4A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standa

8.6. Size:147K diodes
dmn3033ldm.pdf pdf_icon

DMN3033LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SOT-26 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 33 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020D 40 m @VGS

8.7. Size:130K diodes
dmn3033lsn.pdf pdf_icon

DMN3033LSNN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low Gate Charge Case: SC-59 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020 40 m @VGS =

8.8. Size:573K diodes
dmn3032lfdb.pdf pdf_icon

DMN3032LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance ID Max BVDSS RDS(ON) Max Low Input Capacitance TA = +25C Fast Switching Speed 6.2A 30m @ VGS = 10V Low Input/Output Leakage 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 42m @ VGS = 4.5V 5.2A Halogen and Antimony Free

8.9. Size:177K diodes
dmn3030lss.pdf pdf_icon

DMN3030LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 18m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D

8.10. Size:75K tysemi
dmn3033lsn.pdf pdf_icon

Product specificationDMN3033LSNN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low Gate Charge Case: SC-59 Low RDS(ON): Case Material - Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 30 m @VGS = 10V Moisture Sensitivity: Level 1 per J-STD-020 40 m @VGS = 4.5V Terminals: Finish Matte

8.11. Size:836K cn vbsemi
dmn3033lsn.pdf pdf_icon

DMN3033LSNwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)

Datasheet: DMN3005LK3 , DMN3007LSS , DMN3010LSS , DMN3020LK3 , DMN3024LK3 , DMN3024LSD , DMN3024LSS , DMN3030LSS , IRFZ24N , DMN3033LDM , DMN3033LSD , DMN3033LSN , DMN3051L , DMN3051LDM , DMN3052L , DMN3052LSS , DMN3112S .

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DMN3031LSS MOSFET. Datasheet pdf. Equivalent

DMN3031LSS Datasheet (PDF)

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