MDT60N10D Datasheet and Replacement. Cross Reference Search

MDT60N10D Datasheet (PDF)

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100V N-Channel Power MOSFETDESCRIPTIONThe MDT60N10D uses advanced trench technology toprovide excellent RDS(ON), low gate charge. It can be usedin a wide variety of applications.KEY CHARACTERISTICS V = 100V,I = 60A R

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DESCRIPTIONThe MPG60N10P uses advanced trench technology to provideexcellent RDS(ON), low gate charge. It can be used in a widevariety of applications.Application Power switching application Hard switched and High frequency circuits Uninterruptible power supplySchematic diagramKEY CHARACTERISTICS V = 100V,I = 60ADS DR

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60V N-Channel Power MOSFETDESCRIPTIONThe MPG60NF06 uses advanced trench technology toprovide excellent R , low gate charge. It can be used inDS(ON)a wide variety of applications.KEY CHARACTERISTICS V = 60V,I = 60ADS DR

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60V N-Channel Power MOSFEDescriptionThe MDT60N06 uses advanced trench technologyto provide excellent RDS(ON), low gate charge. It canbe used in a wide variety of applications.General Features V =60V, R

Datasheet: MPF9N20 , MPG100N06P , MPG100N06S , MPG100N07P , MPG100N07S , MPG100N08P , MDT5N65 , MDT60N06D , 12N60 , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , MLS65R380D , MLS65R580D , MP11P20 .