MLS65R380D Datasheet. Specs and Replacement

Type Designator: MLS65R380D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 31 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 560 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO252

MLS65R380D substitution

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MLS65R380D datasheet

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mls65r380d.pdf pdf_icon

MLS65R380D

Description MLS65R380D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V,I =11A R ... See More ⇒

 8.1. Size:538K  cn minos
mls65r580d.pdf pdf_icon

MLS65R380D

Description MLS65R580D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V,I =8A R ... See More ⇒

Detailed specifications: MDT5N65, MDT60N06D, MDT60N10D, MDT60NF06D, MDT70N03, MDT7N65, MDT9N20, MLS60R380D, 13N50, MLS65R580D, MP11P20, MP150N08P, MP180N06P, MP18N20, MP20N40P, MP3205B, MP40N20

Keywords - MLS65R380D MOSFET specs

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