MLS65R380D Datasheet and Replacement
Type Designator: MLS65R380D
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 560 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
Package: TO252
MLS65R380D Transistor Equivalent Substitute - MOSFET Cross-Reference Search
MLS65R380D Datasheet (PDF)
mls65r380d.pdf
Description MLS65R380D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V,I =11A R ... See More ⇒
mls65r580d.pdf
Description MLS65R580D, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS,high speed switching and general purpose applications. KEY CHARACTERISTICS V =650V,I =8A R ... See More ⇒
Datasheet: MDT5N65 , MDT60N06D , MDT60N10D , MDT60NF06D , MDT70N03 , MDT7N65 , MDT9N20 , MLS60R380D , 13N50 , MLS65R580D , MP11P20 , MP150N08P , MP180N06P , MP18N20 , MP20N40P , MP3205B , MP40N20 .
Keywords - MLS65R380D MOSFET datasheet
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