DMN3051LDM
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3051LDM
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2
V
|Id|ⓘ - Maximum Drain Current: 4
A
Qgⓘ - Total Gate Charge: 8.6
nC
Cossⓘ -
Output Capacitance: 424
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.064
Ohm
Package:
SOT26
DMN3051LDM
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3051LDM
Datasheet (PDF)
..1. Size:111K diodes
dmn3051ldm.pdf
DMN3051LDMN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-26 38 m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 64 m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low
6.1. Size:193K diodes
dmn3051l.pdf
DMN3051LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 RDS(ON)
6.2. Size:100K tysemi
dmn3051l.pdf
Product specification DMN3051LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance: ID V(BR)DSS RDS(ON) Low Gate Threshold Voltage TA = 25C Low Input Capacitance 38m @ VGS = -10V 5.8A Fast Switching Speed 30V Low Input/Output Leakage 64m @ VGS = -4.5V 4.5A Lead-Free Finish; RoHS compliant (Note 1)
8.1. Size:346K diodes
dmn3053l.pdf
DMN3053LN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low On-ResistanceV(BR)DSS RDS(ON) TA = +25C Low Gate Threshold Voltage Low Input Capacitance 45m @ VGS = 10V 4.0 A 30V Fast Switching Speed 50m @ VGS = 4.5V 3.5A Low Input/Output Leakage ESD Protected GateDescription Totally Lead-Free & Fully RoHS Co
8.2. Size:135K diodes
dmn3050s.pdf
DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T
8.3. Size:170K diodes
dmn3052lss.pdf
DMN3052LSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SO-8 30m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 40m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020
8.4. Size:159K diodes
dmn3052l.pdf
DMN3052LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
8.5. Size:132K diodes
dmn3050s-7.pdf
DMN3050SN-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-2335m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 50m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D Low Gate T
8.6. Size:91K tysemi
dmn3052l.pdf
Product specificationDMN3052LN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance: Case: SOT-23RDS(ON)
Datasheet: DMN3024LSD
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