DMN3115UDM MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN3115UDM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 0.9 W
Maximum Drain-Source Voltage |Vds|: 30 V
Maximum Gate-Source Voltage |Vgs|: 8 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V
Maximum Drain Current |Id|: 3.2 A
Drain-Source Capacitance (Cd): 476 pF
Maximum Drain-Source On-State Resistance (Rds): 0.06 Ohm
Package: SOT26
DMN3115UDM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN3115UDM Datasheet (PDF)
dmn3115udm.pdf
DMN3115UDMN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-26 60 m @ VGS = 4.5V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 80 m @ VGS = 2.5V Moisture Sensitivity: Level 1 per J-STD-020 130 m @ VGS = 1.5V Terminal Connections:
dmn3112sss.pdf
DMN3112SSSSINGLE N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOP-8L 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020D
dmn3112s.pdf
DMN3112SN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance: Case: SOT-23 57m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-02
dmn3110lcp3.pdf
DMN3110LCP3 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID Low Qg & Qgd BVDSS RDS(ON) Max TA = +25C Small Footprint Low Profile 0.30mm Height 69m @ VGS = 8V 3.2A 30V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 80m @ VGS = 4.5V 3.0A Halogen and Antimony Free. Green Device (Note 3) Description Mecha
dmn3110s.pdf
DMN3110SN-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID max V(BR)DSS RDS(ON) max Low Input Capacitance TA = +25C Fast Switching Speed 73m @ VGS = 10V 3.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 30V 110m @ VGS = 4.5V 2.7A Quali
dmn3112s.pdf
Product specification DMN3112SN-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance: Case: SOT2357m @ VGS = 10V Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 112m @ VGS = 4.5V Moisture Sensitivity: Level 1 per J-STD-020 Low Gate Threshold Voltage Terminals: Finis
dmn3110s.pdf
Product specificationDMN3110S N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-ResistanceID maxV(BR)DSS RDS(ON) max Low Input Capacitance TA = 25C Fast Switching Speed 73m @ VGS = 10V 3.3A Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) 30V 110m @ VGS = 4.5V 2.7A Qualified to AEC-Q101 sta
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