AP10N06S PDF and Equivalents Search

 

AP10N06S Specs and Replacement

Type Designator: AP10N06S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14.2 nS

Cossⓘ - Output Capacitance: 86 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

AP10N06S substitution

- MOSFET ⓘ Cross-Reference Search

 

AP10N06S datasheet

 ..1. Size:936K  cn apm
ap10n06s.pdf pdf_icon

AP10N06S

AP10N06S 60V N-Channel Enhancement Mode MOSFET Description The AP10N06S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10 A DS D R ... See More ⇒

 7.1. Size:1726K  cn apm
ap10n06d.pdf pdf_icon

AP10N06S

AP10N06D 60V N-Channel Enhancement Mode MOSFET Description The AP10N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =13A DS D R ... See More ⇒

 7.2. Size:1506K  cn apm
ap10n06msi.pdf pdf_icon

AP10N06S

AP10N06MSI 60V N-Channel Enhancement Mode MOSFET Description The AP10N06MSI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =10A DS D R ... See More ⇒

 8.1. Size:255K  ape
ap10n012in.pdf pdf_icon

AP10N06S

AP10N012IN Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 100V Simple Drive Requirement RDS(ON) 12.5m Lower On-resistance ID 35.4A G G RoHS Compliant & Halogen-Free S S Description AP4604 series are from AdvancedPower innovated design AP10N012 series are fromAdvanced Power innovated desi... See More ⇒

Detailed specifications: APG40N10S , APG60N10D , APG60N10NF , APG130N06P , APG130N06T , APG130N06F , APG180N04NF , APG20N06S , 2SK3568 , AP10N10D , AP10N10S , AP10N15D , AP10N65F , AP10N65P , AP10P04D , AP10P06MSI , AP10P10D .

Keywords - AP10N06S MOSFET specs

 AP10N06S cross reference
 AP10N06S equivalent finder
 AP10N06S pdf lookup
 AP10N06S substitution
 AP10N06S replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility

 

 

 


 
↑ Back to Top
.