2SK3272-01S MOSFET. Datasheet pdf. Equivalent
Type Designator: 2SK3272-01S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 135 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 3.5 V
Maximum Drain Current |Id|: 80 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 145 nC
Rise Time (tr): 200 nS
Drain-Source Capacitance (Cd): 1250 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0065 Ohm
Package: TO263
2SK3272-01S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
2SK3272-01S Datasheet (PDF)
0.1. 2sk3272-01sj-01s-01l.pdf 
Size:355K _fuji
2SK3272-01L,S,SJ200509N-CHANNEL SILICON POWER MOSFETTrench Power MOSFETOutline DrawingsFeaturesHigh speed switchingLow on-resistanceNo secondary breakdownLow driving powerAvalanche-proofSee to P4ApplicationsSwitching regulators DC-DC convertersGeneral purpose power amplifierMaximum ratings and characteristicsAbsolute maximum ratings (Tc=25C unless otherwise s
8.1. 2sk3273-01mr.pdf Size:137K _1
N-channel MOS-FET2SK3273-01MR6,5mTrench Gate MOSFET 60V 70A 70W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), u
8.2. 2sk3270-01.pdf Size:235K _1
N-channel MOS-FET2SK3270-016,5mTrench Gate MOSFET 60V 80A 135W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C), u
8.3. 2sk3278.pdf Size:30K _sanyo
Ordering number : ENN66802SK3278N-Channel Silicon MOSFET2SK3278DC/DC Converter ApplicationsFeatures Package Dimensions Low ON-resistance. unit : mm 4V drive. 2083B Ultrahigh-speed switching.[2SK3278]6.52.35.00.540.850.71.20.60.51 : Gate1 2 32 : Drain3 : Source4 : Drain2.3 2.3 SANYO : TPunit : mm2092B[2SK3278]6.5 2.35.0 0.54
8.4. rej03g1098 2sk3274lsds.pdf Size:140K _renesas
To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.
8.5. 2sk3274.pdf Size:127K _renesas
2SK3274 (L), 2SK3274 (S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1098-0300 Rev.3.00 May 15, 2006 Features Low on-resistance RDS (on) = 10 m typ. 4.5 V gate drive device High speed switching Outline RENESAS Package code: PRSS0004ZD-B RENESAS Package code: PRSS0004ZD-C(Package name: DPAK (L)-(2) ) (Package name: DPAK (S) )4D2
8.6. 2sk3277.pdf Size:217K _panasonic
This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3277Silicon N-channel power MOSFETUnit: mm6.50.1 Features2.30.15.30.14.350.1 Avalanche energy capability guaranteed0.50.1 High-speed switching No secondary breakdown Applications1.00.1 Non-contact relay0.10.050.50.1 Solenoid drive 0.750.12.
8.7. 2sk3271-01.pdf Size:255K _fuji
N-channel MOS-FET2SK3271-01 6,5mTrench Gate MOSFET 60V 100A 155W> Features > Outline Drawing- High Current- Low On-Resistance- No Secondary Breakdown- Low Driving Power- Avalanche Rated> Applications- Motor Control- General Purpose Power Amplifier- DC-DC converters> Maximum Ratings and Characteristics > Equivalent Circuit- Absolute Maximum Ratings (TC=25C),
8.8. 2sk3271-01.pdf Size:372K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3271-01FEATURESWith TO-247 packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-
8.9. 2sk3271.pdf Size:266K _inchange_semiconductor
isc N-Channel MOSFET Transistor 2SK3271FEATURESWith TO-3P packagingHigh speed switchingStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
Datasheet: 2SK3228 , 2SK3229 , 2SK3233 , 2SK3234 , 2SK3235 , 2SK3270-01 , 2SK3271-01 , 2SK3272-01L , IRFP250 , 2SK3273-01MR , 2SK3274 , 2SK3275-01L , 2SK3275-01S , 2SK3370 , 2SK505 , 2SK507 , 2SK514 .
