All MOSFET. AP4N65Y Datasheet

 

AP4N65Y Datasheet and Replacement


   Type Designator: AP4N65Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 69.5 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
 

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AP4N65Y Datasheet (PDF)

 ..1. Size:1753K  cn apm
 ap4n65d ap4n65y.pdf pdf_icon

AP4N65Y

AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system General Features VDS =650V,ID =4A RDS(

 8.1. Size:1220K  cn apm
 ap4n65f ap4n65p.pdf pdf_icon

AP4N65Y

AP4N65FIP 650V N-Channel Enhancement Mode MOSFET Description The AP4N65F/P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge

Datasheet: AP30N06P , AP30N06T , AP40N20P , AP40N20T , AP45P06F , AP45P06P , AP45P06T , AP4N65D , IRF1404 , AP4N65F , AP4N65P , AP50N06BD , AP50N06BY , AP50N06P , AP50N06T , AP50P06P , AP50P06T .

History: AP50N06P | AP4N65P

Keywords - AP4N65Y MOSFET datasheet

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