DMN3730UFB Specs and Replacement

Type Designator: DMN3730UFB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 0.9 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 65 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.46 Ohm

Package: X1DFN10063

DMN3730UFB substitution

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DMN3730UFB datasheet

 ..1. Size:144K  diodes
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DMN3730UFB

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 0.1. Size:140K  diodes
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DMN3730UFB

DMN3730UFB4 30V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 0.4mm ultra low profile package for thin application ID 0.6mm2 package footprint, 10 times smaller than SOT23 V(BR)DSS RDS(on) TA = 25 C Low VGS(th), can be driven directly from a battery Low RDS(on) 460m @ VGS= 4.5V 0.9A 30V Lead Free , RoHS Compliant (Note... See More ⇒

 6.1. Size:190K  diodes
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DMN3730UFB

A Product Line of Diodes Incorporated DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits ID Max (Note 5) Low VGS(th), can be driven directly from a battery V(BR)DSS Max RDS(on) Low RDS(on) TA = 25 C Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30... See More ⇒

 6.2. Size:170K  tysemi
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DMN3730UFB

Product specification DMN3730U 30V N-CHANNEL ENHANCEMENT MODE MOSFET IN SOT23 Product Summary Features and Benefits Low VGS(th), can be driven directly from a battery ID Max (Note 5) V(BR)DSS Max RDS(on) Low RDS(on) TA = 25 C Lead Free , RoHS Compliant (Note 1) Halogen and Antimony Free. "Green" Device (Note 2) 460m @ VGS= 4.5V 0.94A 30V ESD Protect... See More ⇒

Detailed specifications: DMN3150LW, DMN3200U, DMN32D2LDF, DMN32D2LFB4, DMN32D2LV, DMN3300U, DMN3404L, DMN3730U, IRFZ24N, DMN3730UFB4, DMN4468LSS, DMN4800LSS, DMN4800LSSL, DMS3016SFG, DMS3016SSSA, ZXM61N03F, ZXM62N03G

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs