All MOSFET. AP80P06T Datasheet

 

AP80P06T Datasheet and Replacement


   Type Designator: AP80P06T
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 110 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 82 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 56 nC
   tr ⓘ - Rise Time: 2.5 nS
   Cossⓘ - Output Capacitance: 600 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
   Package: TO263
 

 AP80P06T substitution

   - MOSFET ⓘ Cross-Reference Search

 

AP80P06T Datasheet (PDF)

 ..1. Size:1715K  cn apm
 ap80p06p ap80p06t.pdf pdf_icon

AP80P06T

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS DR

 7.1. Size:1641K  cn apm
 ap80p06d.pdf pdf_icon

AP80P06T

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 7.2. Size:1789K  cn apm
 ap80p06nf.pdf pdf_icon

AP80P06T

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS DR

 8.1. Size:1788K  cn apm
 ap80p04d.pdf pdf_icon

AP80P06T

AP80P04D -40V P-Channel Enhancement Mode MOSFET Description The AP80P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-80 A DS DR

SHOW MORE

Datasheet: AP7N65Y , AP7N65F , AP7N65P , AP80N07P , AP80N07T , AP80N10P , AP80N10T , AP80P06P , AON7410 , AP80P10P , AP80P10T , AP85N08BP , AP85N08BT , AP90N06P , AP90N06T , AP9N90F , AP9N90P .

History: AP7N65P

Keywords - AP80P06T MOSFET datasheet

 AP80P06T cross reference
 AP80P06T equivalent finder
 AP80P06T lookup
 AP80P06T substitution
 AP80P06T replacement

 

 
Back to Top

 


 
.