AP80P06T MOSFET Datasheet: P-Ch, 60V, 82A. Full specification with pinout and replacement list

AP80P06T Specs and Replacement

Type Designator: AP80P06T

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 110 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 82 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.5 nS

Cossⓘ - Output Capacitance: 600 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm

Package: TO263

AP80P06T substitution

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AP80P06T datasheet

..1. Size:1715K cn apm
ap80p06p ap80p06t.pdf pdf_icon

AP80P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP80P06P/T uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-82A DS D R ... See More ⇒

7.1. Size:1641K cn apm
ap80p06d.pdf pdf_icon

AP80P06D -60V P-Channel Enhancement Mode MOSFET Description The AP80P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R ... See More ⇒

7.2. Size:1789K cn apm
ap80p06nf.pdf pdf_icon

AP80P06NF -60V P-Channel Enhancement Mode MOSFET Description The AP80P06NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 6V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-80A DS D R ... See More ⇒

8.1. Size:508K allpower
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