All MOSFET. AP9N20Y Datasheet

 

AP9N20Y Datasheet and Replacement


   Type Designator: AP9N20Y
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 74 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 103 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO251
 

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AP9N20Y Datasheet (PDF)

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AP9N20Y

AP9N20Y 200V N-Channel Enhancement Mode MOSFET Description The AP9N20Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

 8.1. Size:1138K  cn apm
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AP9N20Y

AP9N20P 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

 8.2. Size:1216K  cn apm
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AP9N20Y

AP9N20D 200V N-Channel Enhancement Mode MOSFET Description The AP9N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Genera

Datasheet: AP90N06F , AP90P01D , AP90P03NF , AP9435A , AP9926A , AP9928A , AP9N20D , AP9N20P , EMB04N03H , AP9P20D , APG100N10D , APG110N10NF , APG120N10NF , APG120N12NF , APG130N06D , APG130N06NF , AP7P15D .

History: 2SK3399

Keywords - AP9N20Y MOSFET datasheet

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