AP15G03NF Specs and Replacement

Type Designator: AP15G03NF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 18 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.8 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: PDFN5X6-8L

AP15G03NF substitution

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AP15G03NF datasheet

 ..1. Size:1771K  cn apm
 ap15g03nf.pdf pdf_icon

AP15G03NF

AP15G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS D R ... See More ⇒

 7.1. Size:2641K  cn apm
 ap15g03df.pdf pdf_icon

AP15G03NF

AP15G03DF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =19.3A DS D R ... See More ⇒

 8.1. Size:2122K  cn apm
 ap15g04nf.pdf pdf_icon

AP15G03NF

AP15G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP15G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =21A DS D R ... See More ⇒

Detailed specifications: AP80P04D, AP80P04NF, AP80P06D, AP150N03D, AP150N03NF, AP150N04D, AP150P03NF, AP15G03DF, IRF640N, AP15N02S, AP15N06S, AP15N10D, AP15N10D-L, AP15N10S, AP15N10Y, AP15N12D, AP15P04D

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