AP15G03NF Datasheet and Replacement
Type Designator: AP15G03NF
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 18 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.8 nS
Cossⓘ - Output Capacitance: 81 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: PDFN5X6-8L
AP15G03NF substitution
AP15G03NF Datasheet (PDF)
ap15g03nf.pdf
AP15G03NF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =18A DS DR
ap15g03df.pdf
AP15G03DF 30V N+P-Channel Enhancement Mode MOSFET Description The AP15G03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =19.3A DS DR
ap15g04nf.pdf
AP15G04NF 40V N+P-Channel Enhancement Mode MOSFET Description The AP15G04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =21A DS DR
Datasheet: AP80P04D , AP80P04NF , AP80P06D , AP150N03D , AP150N03NF , AP150N04D , AP150P03NF , AP15G03DF , IRF640N , AP15N02S , AP15N06S , AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y , AP15N12D , AP15P04D .
History: IRFU7746PBF
Keywords - AP15G03NF MOSFET datasheet
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: IRFU7746PBF
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