AP2300MI MOSFET: N-Ch, 20V, 3.3A. Full datasheet with pinout, specifications and replacement transistor list

AP2300MI Datasheet (PDF)

..1. Size:2205K cn apm
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AP2300MI20V N-Channel Enhancement Mode MOSFET Description The AP2300MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =3.3A DS DR

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8.2. Size:1506K cn vbsemi
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AP2300GNwww.VBsemi.twN-Channel 20 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)e Qg (Typ.)Definition0.028 at VGS = 4.5 V TrenchFET Power MOSFET6a 100 % Rg Tested20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC0.050 at VGS = 1.8 V 5.6APPLICATIONS DC/DC Conve

8.3. Size:1493K cn apm
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AP2300AI 20V N-Channel Enhancement Mode MOSFET Description The AP2300AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V,I = 3.3A DS DR

Datasheet: AP15N10D , AP15N10D-L , AP15N10S , AP15N10Y , AP15N12D , AP15P04D , AP15P06D , AP2300AI , 7N65 , AP2301BI , AP2302CI , AP2305AI , AP2305BI , AP2305MI , AP2307AI , AP2307MI , AP2311AI .