AP50N03D Specs and Replacement

Type Designator: AP50N03D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 131 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm

Package: TO252

AP50N03D substitution

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AP50N03D datasheet

 ..1. Size:1965K  cn apm
 ap50n03d.pdf pdf_icon

AP50N03D

AP50N03D 30V N-Channel Enhancement Mode MOSFET Description The AP50N03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R ... See More ⇒

 0.1. Size:1079K  cn apm
 ap50n03df.pdf pdf_icon

AP50N03D

AP50N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP50N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50A DS D R ... See More ⇒

 7.1. Size:1666K  cn apm
 ap50n03ad.pdf pdf_icon

AP50N03D

AP50N03AD 30V N-Channel Enhancement Mode MOSFET Description The AP50N03AD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =30V I =50A DS D R ... See More ⇒

 7.2. Size:1736K  cn apm
 ap50n03s.pdf pdf_icon

AP50N03D

AP50N03S 30V N-Channel Enhancement Mode MOSFET Description The AP50N03S uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =50 A DS D R ... See More ⇒

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Detailed specifications: AP2313MI, AP2320MI, AP4N10MI, AP4N15MI, AP4P05MI, AP50G03GD, AP50H06NF, AP50N03AD, 12N60, AP50N03DF, AP50N04D, AP50N05D, AP50N06D, AP50N06NF, AP50N10D, AP50N10P, AP50N20MP

Keywords - AP50N03D MOSFET specs

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