ZXMN3A02N8 MOSFET Datasheet: N-Ch, 30V, 9A. Full specification with pinout and replacement list

ZXMN3A02N8 Specs and Replacement

Type Designator: ZXMN3A02N8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: SO8

ZXMN3A02N8 substitution

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ZXMN3A02N8 datasheet

..1. Size:180K diodes
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ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance ... See More ⇒

0.1. Size:179K zetex
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6.1. Size:454K diodes
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ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw... See More ⇒

6.2. Size:453K zetex
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