ZXMN3A02X8 Specs and Replacement

Type Designator: ZXMN3A02X8

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6.7 A

Electrical Characteristics

Cossⓘ - Output Capacitance: 1400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: MSOP8

ZXMN3A02X8 substitution

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ZXMN3A02X8 datasheet

 ..1. Size:454K  diodes
 zxmn3a02x8.pdf pdf_icon

ZXMN3A02X8

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw... See More ⇒

 0.1. Size:453K  zetex
 zxmn3a02x8ta.pdf pdf_icon

ZXMN3A02X8

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw... See More ⇒

 0.2. Size:453K  zetex
 zxmn3a02x8tc.pdf pdf_icon

ZXMN3A02X8

ZXMN3A02X8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS=30V; RDS(ON)=0.025 ID=6.7A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES Low on-resistance Fast sw... See More ⇒

 6.1. Size:180K  diodes
 zxmn3a02n8.pdf pdf_icon

ZXMN3A02X8

ZXMN3A02N8 30V N-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = 30V; RDS(ON) = 0.025 ID = 9.0A DESCRIPTION This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. SO8 FEATURES Low on-resistance ... See More ⇒

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Detailed specifications: DMS3016SFG, DMS3016SSSA, ZXM61N03F, ZXM62N03G, ZXMD63N03X, ZXMN3A01E6, ZXMN3A01F, ZXMN3A02N8, IRLB3034, ZXMN3A03E6, ZXMN3A04DN8, ZXMN3A04K, ZXMN3A06DN8, ZXMN3A14F, ZXMN3AMC, ZXMN3B01F, ZXMN3B04N8

Keywords - ZXMN3A02X8 MOSFET specs

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