All MOSFET. AP16P01BF Datasheet

 

AP16P01BF Datasheet and Replacement


   Type Designator: AP16P01BF
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 32 nS
   Cossⓘ - Output Capacitance: 132 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: DFN2X2-6L
 

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AP16P01BF Datasheet (PDF)

 ..1. Size:1331K  cn apm
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AP16P01BF

AP16P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP16P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-16A DS DR

 8.1. Size:1497K  cn apm
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AP16P01BF

AP16P02S -20V P-Channel Enhancement Mode MOSFET Description The AP16P02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-16A DS DR

Datasheet: AP8N10MI , AP8P04MI , AP8P04S , AP8V06S , AP90N02D , AP90N02NF , AP15P06DF , AP15P10D , IRF2807 , AP16P02S , AP180N03D , AP180N04NF , AP180N10MP , AP18N03D , AP18P20P , AP1N10I , AP200N04NF .

History: IRFU7746PBF

Keywords - AP16P01BF MOSFET datasheet

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