AP18P20P Specs and Replacement

Type Designator: AP18P20P

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 325 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 86 nS

Cossⓘ - Output Capacitance: 7400 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.32 Ohm

Package: TO220

AP18P20P substitution

- MOSFET ⓘ Cross-Reference Search

 

AP18P20P datasheet

 ..1. Size:1192K  cn apm
ap18p20p.pdf pdf_icon

AP18P20P

AP18P20P -200V P-Channel Enhancement Mode MOSFET Description The AP18P20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gen... See More ⇒

 9.1. Size:200K  ape
ap18p10agh.pdf pdf_icon

AP18P20P

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching... See More ⇒

 9.2. Size:174K  ape
ap18p10gh.pdf pdf_icon

AP18P20P

AP18P10GH/J RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 180m Fast Switching Characteristic ID -12A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G D ruggedized device design, low on-r... See More ⇒

 9.3. Size:65K  ape
ap18p10aghj-hf.pdf pdf_icon

AP18P20P

AP18P10AGH/J-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -100V Simple Drive Requirement RDS(ON) 140m Fast Switching Characteristic ID -12A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching... See More ⇒

Detailed specifications: AP15P06DF, AP15P10D, AP16P01BF, AP16P02S, AP180N03D, AP180N04NF, AP180N10MP, AP18N03D, 75N75, AP1N10I, AP200N04NF, AP200N04TLG5, AP200N10MP, AP200N15MP, AP200N15TLG1, AP20G03GD, AP280N10MP

Keywords - AP18P20P MOSFET specs

 AP18P20P cross reference

 AP18P20P equivalent finder

 AP18P20P pdf lookup

 AP18P20P substitution

 AP18P20P replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs