AP200N15MP Specs and Replacement

Type Designator: AP200N15MP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 200 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 115 nS

Cossⓘ - Output Capacitance: 412 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm

Package: TO247

AP200N15MP substitution

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AP200N15MP datasheet

 ..1. Size:1577K  cn apm
 ap200n15mp.pdf pdf_icon

AP200N15MP

AP200N15MP 150V N-Channel Enhancement Mode MOSFET Description The AP200N15MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R ... See More ⇒

 6.1. Size:1629K  cn apm
 ap200n15tlg1.pdf pdf_icon

AP200N15MP

AP200N15TLG1 150V N-Channel Enhancement Mode MOSFET Description The AP200N15TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =200A DS D R ... See More ⇒

 7.1. Size:1498K  cn apm
 ap200n12p ap200n12t.pdf pdf_icon

AP200N15MP

AP200N12PIT 120V N-Channel Enhancement Mode MOSFET Description The AP200N12P/T uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =200A DS D R ... See More ⇒

 7.2. Size:1458K  cn apm
 ap200n10mp.pdf pdf_icon

AP200N15MP

AP200N10MP 100V N-Channel Enhancement Mode MOSFET Description The AP200N10MP uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =200A DS D R ... See More ⇒

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Detailed specifications: AP180N04NF, AP180N10MP, AP18N03D, AP18P20P, AP1N10I, AP200N04NF, AP200N04TLG5, AP200N10MP, 7N60, AP200N15TLG1, AP20G03GD, AP280N10MP, AP2N20MI, AP2N30MI, AP2N7002A, AP2P15MI, AP300N04TLG5

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