AP50P03DF MOSFET Datasheet: P-Ch, 30V, 50A. Full specification with pinout and replacement list

AP50P03DF Specs and Replacement

Type Designator: AP50P03DF

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 73.7 nS

Cossⓘ - Output Capacitance: 310 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm

Package: PDFN3X3-8L

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AP50P03DF datasheet

..1. Size:1388K cn apm
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AP50P03DF -30V P-Channel Enhancement Mode MOSFET Description The AP50P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50 A DS D R ... See More ⇒

6.1. Size:1281K cn apm
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AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R ... See More ⇒

7.1. Size:1629K cn apm
ap50p03nf.pdf pdf_icon

AP50P03NF 30V P-Channel Enhancement Mode MOSFET Description The AP50P03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R ... See More ⇒

8.1. Size:800K allpower
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