AP20H04NF Datasheet and Replacement. Cross Reference Search

AP20H04NF Datasheet (PDF)

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AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR

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AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS DR

8.2. Size:1511K cn apm
ap20h02s.pdf pdf_icon

AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF9540 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .