All MOSFET. AP20H04NF Datasheet

 

AP20H04NF Datasheet and Replacement


   Type Designator: AP20H04NF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 20 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 109 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: PDFN5X6-8L
 

 AP20H04NF substitution

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AP20H04NF Datasheet (PDF)

 ..1. Size:1626K  cn apm
ap20h04nf.pdf pdf_icon

AP20H04NF

AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR

 8.1. Size:1317K  cn apm
ap20h03nf.pdf pdf_icon

AP20H04NF

AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS DR

 8.2. Size:1511K  cn apm
ap20h02s.pdf pdf_icon

AP20H04NF

AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR

Datasheet: AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , AP20G04NF , AP20G06GD , AP20H02S , AP20H03NF , AO3401 , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , AP20N06S , AP20N10D , AP20P01BF .

History: IRFH7190

Keywords - AP20H04NF MOSFET datasheet

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