AP20H04NF Datasheet and Replacement
Type Designator: AP20H04NF
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 20 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 14 nS
Cossⓘ - Output Capacitance: 109 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: PDFN5X6-8L
AP20H04NF substitution
AP20H04NF Datasheet (PDF)
ap20h04nf.pdf
AP20H04NF 40V N+N-Channel Enhancement Mode MOSFET Description The AP20H04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =20A DS DR
ap20h03nf.pdf
AP20H03NF 30V N+N-Channel Enhancement Mode MOSFET Description The AP20H03NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =24.7A DS DR
ap20h02s.pdf
AP20H02S 20V N+N-Channel Enhancement Mode MOSFET Description The AP20H02S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =20A DS DR
Datasheet: AP70P03D , AP70P03DF , AP20G03NF , AP20G04GD , AP20G04NF , AP20G06GD , AP20H02S , AP20H03NF , AO3401 , AP20N02BF , AP20N02DF , AP20N03D , AP20N06BD , AP20N06D , AP20N06S , AP20N10D , AP20P01BF .
History: IRFH7190
Keywords - AP20H04NF MOSFET datasheet
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IRFH7190
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