SSC8K21GN3 Specs and Replacement

Type Designator: SSC8K21GN3

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 187 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: DFN3X2

SSC8K21GN3 substitution

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SSC8K21GN3 datasheet

 ..1. Size:542K  afsemi
 ssc8k21gn3.pdf pdf_icon

SSC8K21GN3

SSC8K21GN3 P-Channel Enhancement Mode MOSFET with Schottky Diode Features Applications P-MOSFET Li Battery Charging VDS VGS RDSon TYP ID High Side DC/DC Converter High Side Driver for Brushless DC Motor 105mR@-4V5 Power Management in Portable, Battery -20V 8V 130mR@-2V5 -2A Powered Devices 180mR@-1V8 Pin configuration Schottky Top View V... See More ⇒

 8.1. Size:242K  afsemi
 ssc8k23gn2.pdf pdf_icon

SSC8K21GN3

SSC8K23GN2 P-Channel Enhancement Mode MOSFET with Schottky Diode Features Applications P-MOSFET Bidirectional blocking switch; DC-DC conversion applications; VDS VGS RDSon TYP ID Li-battery charging; 60mR@-4V5 -20V 8V 75mR@-2V5 -3.4A Pin configuration 105mR@-1V8 Top View Schottky VR IR VF IO 6 5 4 20V 15uA 410mV@1A 2A K G S Genera... See More ⇒

Detailed specifications: AP20N02DF, AP20N03D, AP20N06BD, AP20N06D, AP20N06S, AP20N10D, AP20P01BF, SSC8415GS6, 5N65, SSC8K23GN2, SSC8P20AN2, SSC8P22AN3, SSC8P22CN2, AP3410MI, AP3415A, AP35H04NF, AP3N06I

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