AP3415A Specs and Replacement

Type Designator: AP3415A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8.6 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.043 Ohm

Package: SOT23

AP3415A substitution

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AP3415A datasheet

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 ap3415a.pdf pdf_icon

AP3415A

AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide var... See More ⇒

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AP3415A

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AP3415A

AP3410MI 30V N-Channel Enhancement Mode MOSFET Description The AP3410MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R ... See More ⇒

 9.2. Size:1247K  cn apm
 ap3416ai.pdf pdf_icon

AP3415A

AP3416AI 20V N-Channel Enhancement Mode MOSFET Description The AP3416AI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =6.8A DS D R ... See More ⇒

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Detailed specifications: AP20P01BF, SSC8415GS6, SSC8K21GN3, SSC8K23GN2, SSC8P20AN2, SSC8P22AN3, SSC8P22CN2, AP3410MI, NCEP15T14, AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, AP3P06LI

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