All MOSFET. AP3N06I Datasheet

 

AP3N06I Datasheet and Replacement


   Type Designator: AP3N06I
   Marking Code: 6003
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 5 nC
   tr ⓘ - Rise Time: 7.2 nS
   Cossⓘ - Output Capacitance: 38 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: SOT23

 AP3N06I Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP3N06I Datasheet (PDF)

 ..1. Size:1829K  cn apm
ap3n06i.pdf pdf_icon

AP3N06I

AP3N06I 60V N-Channel Enhancement Mode MOSFET Description The AP3N06I uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS D R

 8.1. Size:1479K  cn apm
ap3n06mi.pdf pdf_icon

AP3N06I

AP3N06MI 60V N-Channel Enhancement Mode MOSFET Description The AP3N06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =3A DS D R

 9.1. Size:71K  ape
ap3n028ey.pdf pdf_icon

AP3N06I

AP3N028EY Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET S Simple Drive Requirement BVDSS 30V D Lower Gate Charge D RDS(ON) 28m Fast Switching Performance ID 7A G D RoHS Compliant & Halogen-Free D SOT-26 D Description AP3N028E series are from Advanced Power innovated design and silicon G process technology to ach

 9.2. Size:202K  ape
ap3n020p.pdf pdf_icon

AP3N06I

AP3N020P Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Rg & UIS Test D BVDSS 30V Simple Drive Requirement RDS(ON) 20m Fast Switching Characteristic ID 23.3A G G RoHS Compliant & Halogen-Free S S Description AP4604 seriesare fromAdvanced Power innovated design AP3N020series arefrom Advanced Power innovated de

Datasheet: SSC8K21GN3 , SSC8K23GN2 , SSC8P20AN2 , SSC8P22AN3 , SSC8P22CN2 , AP3410MI , AP3415A , AP35H04NF , STP80NF70 , AP3N06MI , AP3N10BI , AP3N50D , AP3P06AI , AP3P06BI , AP3P06LI , AP3P10MI , AP3P10S .

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