AP3P06LI Datasheet. Specs and Replacement

Type Designator: AP3P06LI

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 3.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.4 nS

Cossⓘ - Output Capacitance: 59 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm

Package: SOT23-6L

AP3P06LI substitution

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AP3P06LI datasheet

 ..1. Size:1382K  cn apm
 ap3p06li.pdf pdf_icon

AP3P06LI

AP3P06LI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06LI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS D R ... See More ⇒

 8.1. Size:1298K  cn apm
 ap3p06bi.pdf pdf_icon

AP3P06LI

AP3P06BI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-2.8A DS D R ... See More ⇒

 8.2. Size:1865K  cn apm
 ap3p06mi.pdf pdf_icon

AP3P06LI

AP3P06MI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-3.8A DS D R ... See More ⇒

 8.3. Size:2081K  cn apm
 ap3p06ai.pdf pdf_icon

AP3P06LI

AP3P06AI -60V P-Channel Enhancement Mode MOSFET Description The AP3P06AI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -60V ID =-3 A RDS(ON) ... See More ⇒

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Detailed specifications: AP3415A, AP35H04NF, AP3N06I, AP3N06MI, AP3N10BI, AP3N50D, AP3P06AI, AP3P06BI, IRFP250, AP3P10MI, AP3P10S, AP40G03NF, AP40H04NF, AP40H10NF, ATM06P50TC, ATM10N10SQ, ATM10N65TF

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.