All MOSFET. AP5N20D-H Datasheet

 

AP5N20D-H Datasheet and Replacement


   Type Designator: AP5N20D-H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 46 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 48 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
   Package: TO252
 

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AP5N20D-H Datasheet (PDF)

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AP5N20D-H

AP5N20D-H 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D-H is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. G

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AP5N20D-H

AP5N20D 200V N-Channel Enhancement Mode MOSFET Description The AP5N20D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener

 9.1. Size:179K  ape
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AP5N20D-H

AP5N2K2EN1Halogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Capable of 0.9V Very Low Gate Drive BVDSS 50VD Lower Gate Charge RDS(ON) 2.2G Fast Switching Performance ID 200mA RoHS Compliant & Halogen-Free HBM ESD 2KVSDescription2 1 : Gate2 : DrainAP5N2K2E series are from Advanced Power innovated design3 : Sourc

Datasheet: ATM2301PSC , ATM2302NSA , ATM2305PSA , ATM2310NSA , ATM2320KNSA , AP4959A , AP5N15MSI , AP5N20D , IRFZ46N , AP5N30D , , , , , , , .

History: ATM2310NSA

Keywords - AP5N20D-H MOSFET datasheet

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