ATM2602NSG Datasheet. Specs and Replacement

Type Designator: ATM2602NSG

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.35 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm

Package: SOT23-6

ATM2602NSG substitution

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ATM2602NSG datasheet

 ..1. Size:1378K  agertech
 atm2602nsg.pdf pdf_icon

ATM2602NSG

ATM2602NSG Dual N-Channel Enhancement Mode Power MOSFET Drain-Source Voltage 20V Continuous Drain Current 3A Features SOT-23-6L Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on) R 65m ( V =4.5V) DS(ON) GS R 85m ( V =2.5V) DS(ON) GS Application Driver for Relay, Solenoid, Motor, LED etc. Power supply converters circuit ... See More ⇒

 8.1. Size:822K  agertech
 atm2604knsg.pdf pdf_icon

ATM2602NSG

ATM2604KNSG 20V N-Channel Enhancement Mode MOSFET Descriptions The ATM2604KNSG uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for Schematic diagram use as a load switch or in PWM applications . Features R ... See More ⇒

 8.2. Size:795K  agertech
 atm2601psg.pdf pdf_icon

ATM2602NSG

ATM2601PSG P-Channel Enhancement Mode Power MOSFET Drain-Source Voltage -20V Continuous Drain Current -2.8A FEATURES SOT23-6 VDS = -20V,ID = -2.8A R ... See More ⇒

Detailed specifications: ATM2310NSA, ATM2320KNSA, AP4959A, AP5N15MSI, AP5N20D, AP5N20D-H, AP5N30D, ATM2320KNSQ, 7N60, ATM2604KNSG, ATM2N65TD, ATM3003PSA, ATM3400NSA, ATM3401APSA, ATM3401PSA, AP6H03S, AP6N03LI

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