ATM3401PSA Datasheet and Replacement
Type Designator: ATM3401PSA
Marking Code: R1
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.3 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 3.2(max) nS
Cossⓘ - Output Capacitance: 115 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.065 Ohm
Package: SOT23
ATM3401PSA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ATM3401PSA Datasheet (PDF)
atm3401psa.pdf
ATM3401PSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -30V Drain Current: -4.2AFeatures Trench FET Power MOSFET Exceptional on-resistance andmaximum DC current capabilityR
atm3401apsa.pdf
ATM3401APSAP-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: -30V Drain Current: -4.2ADESCRIPTIONSSOT-23 The ATM3401APSA uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.FEATURESSchematic diagram V =
atm3400ansa.pdf
ATM3400ANSAN-Channel Enhancement Mode Field Effect TransistorDrain-Source Voltage: 30V Drain Current: 5.8AFEATURESSOT-23 Trench FET Power MOSFET R
atm3404nsa.pdf
ATM3404NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 30V Drain Current: 5A Features Trench FET Power MOSFET Excellent R and Low Gate Charge DS(on)R
Datasheet: AP5N30D , ATM2320KNSQ , ATM2602NSG , ATM2604KNSG , ATM2N65TD , ATM3003PSA , ATM3400NSA , ATM3401APSA , IRFB7545 , AP6H03S , AP6N03LI , AP6N03SI , AP6N04SI , AP70P03NF , AP7N50D , AP80P06NF , AP20P02BF .
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