AP20P04D MOSFET: P-Ch, 40V, 20A. Full datasheet with pinout, specifications and replacement transistor list

..1. Size:1428K cn apm
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AP20P04D -40V P-Channel Enhancement Mode MOSFET Description The AP20P04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -40V I =-20A DS DR

8.1. Size:80K ape
ap20p02gh ap20p02gj.pdf pdf_icon

AP20P02GH/JPb Free Plating ProductAdvanced Power P-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement D BVDSS -20V 2.5V Gate Drive Capability RDS(ON) 52mFast Switching ID -18A GSDescriptionThe Advanced Power MOSFETs from APEC provide theGDdesigner with the best combination of fast sw

8.2. Size:2702K cn apm
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AP20P02D -20V P-Channel Enhancement Mode MOSFET Description The AP20P02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

8.3. Size:1198K cn apm
ap20p01bf.pdf pdf_icon

AP20P01BF -18V P-Channel Enhancement Mode MOSFET Description The AP20P01BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -18V I =-20A DS DR

8.4. Size:1388K cn apm
ap20p02si.pdf pdf_icon

AP20P02SI -20V P-Channel Enhancement Mode MOSFET Description The AP20P02SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

8.5. Size:1216K cn apm
ap20p02bf.pdf pdf_icon

AP20P02BF -20V P-Channel Enhancement Mode MOSFET Description The AP20P02BF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-20A DS DR

8.6. Size:1461K cn apm
ap20p03d.pdf pdf_icon

AP20P03D -30V P-Channel Enhancement Mode MOSFET Description The AP20P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20 A DS DR

8.7. Size:1417K cn apm
ap20p03df.pdf pdf_icon

AP20P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP20P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-20A DS DR

AP20P04D Datasheet (PDF)

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