AP4406A Datasheet. Specs and Replacement
Type Designator: AP4406A 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 140 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.012 Ohm
Package: SOP8
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AP4406A datasheet
..1. Size:1400K cn apm
ap4406a.pdf 
AP4406A 30V N-Channel Enhancement Mode MOSFET Description The AP4406A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =12A DS D R ... See More ⇒
8.1. Size:1957K cn apm
ap4406b.pdf
AP4406B 30V N-Channel Enhancement Mode MOSFET Description The AP4406B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =10A DS D R ... See More ⇒
9.1. Size:155K ape
ap4409gep.pdf
AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovat... See More ⇒
9.2. Size:122K ape
ap4409gep-hf.pdf
AP4409GEP-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS -35V D Simple Drive Requirement RDS(ON) 8.2m G Fast Switching Characteristic ID -80A RoHS Compliant & Halogen-Free S Description AP4409 series are from Advanced Power innovated design and silicon process technology to achieve the lowe... See More ⇒
9.3. Size:211K ape
ap4407i.pdf
AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower On-resistance D BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description AP4407 series are from Advanced Power innovated design and silicon process technology to achieve the lowest ... See More ⇒
9.4. Size:182K ape
ap4409agem.pdf
AP4409AGEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized devic... See More ⇒
9.5. Size:61K ape
ap4409agem-hf.pdf
AP4409AGEM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S RoHS Compliant S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switch... See More ⇒
9.6. Size:98K ape
ap4407gp-hf ap4407gs-hf.pdf
AP4407GS/P-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒
9.7. Size:170K ape
ap4407gm.pdf
AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET BVDSS -30V Simple Drive Requirement D D D RDS(ON) 14m Low On-resistance D ID -10.7A Fast Switching G RoHS Compliant & Halogen-Free S S SO-8 S D Description AP4407 series are from Advanced Pow... See More ⇒
9.8. Size:218K ape
ap4407gp ap4407gs.pdf
AP4407GS/P RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized device design, D S TO-263(... See More ⇒
9.9. Size:184K ape
ap4409gem.pdf
AP4409GEM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS -35V D D D Low On-resistance RDS(ON) 7.5m Fast Switching Characteristic ID -14.5A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device... See More ⇒
9.10. Size:216K ape
ap4405gm.pdf
AP4405GM RoHS-compliat Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Lower On-resistance D RDS(ON) 8.2m D Fast Switching Characteristic ID -14A G S S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device de... See More ⇒
9.11. Size:99K ape
ap4409ageh-hf.pdf
AP4409AGEH-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -35V D Lower On-resistance RDS(ON) 8m G Fast Switching Characteristic ID -85A RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the designer with the D best combination of fast switching, ... See More ⇒
9.12. Size:94K ape
ap4407i-hf.pdf
AP4407I-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -40A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggediz... See More ⇒
9.13. Size:208K ape
ap4407gm-hf.pdf
AP4407GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D Low On-resistance D RDS(ON) 14m D Fast Switching ID -10.7A G RoHS Compliant S S SO-8 S D Description Advanced Power MOSFETs from APEC provide the designer with G the best combination of fast switching, ruggedized d... See More ⇒
9.14. Size:55K ape
ap4409agm-hf.pdf
AP4409AGM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D D D D Low On-resistance RDS(ON) 7.2m Fast Switching Characteristic ID -15A G S RoHS Compliant & Halogen-Free S SO-8 S D Description AP4409A series are from Advanced Power innovated design and silicon process technol... See More ⇒
9.15. Size:71K ape
ap4407s-p.pdf
AP4407S/P Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Lower On-resistance BVDSS -30V Simple Drive Requirement RDS(ON) 14m Fast Switching Characteristic ID -50A G S Description The Advanced Power MOSFETs from APEC provide the G designer with the best combination of fast switching, D S TO-26... See More ⇒
9.19. Size:1552K cn apm
ap4409a.pdf
AP4409A -30V P-Channel Enhancement Mode MOSFET Description The AP4409A uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I = 14A DS D R ... See More ⇒
9.20. Size:2126K cn apm
ap4407a.pdf
AP4407A 30V P-Channel Enhancement Mode MOSFET Description The AP4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -30V ID = -12A RDS(ON) ... See More ⇒
9.21. Size:1385K cn apm
ap4407b.pdf
AP4407B 30V P-Channel Enhancement Mode MOSFET Description The AP4407B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-11.3A DS D R ... See More ⇒
Detailed specifications: AP220N08TLG1, AP220N10MP, AP2222D, AP25G02NF, AP25G03GD, AP25G04GD, AP25N04D, AP25N04S, IRF640, AP4406B, AP4407A, AP4407B, AP4409A, AP4435A, AP4435B, AP45P06D, AP45P06NF
Keywords - AP4406A MOSFET specs
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