AP4953B Spec and Replacement
Type Designator: AP4953B
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 21.8 nS
Cossⓘ - Output Capacitance: 76 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: SOP8
AP4953B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP4953B Specs
ap4953b.pdf
AP4953B -20V P+P-Channel Enhancement Mode MOSFET Description The AP4953B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-6.5A DS D R ... See More ⇒
ap4953gm-hf.pdf
AP4953GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 RoHS Compliant S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G... See More ⇒
ap4953gm.pdf
AP4953GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device ... See More ⇒
Detailed specifications: AP4407B , AP4409A , AP4435A , AP4435B , AP45P06D , AP45P06NF , AP4606C , AP4953A , IRFB4115 , AP5N40D , AP5N50BD , AP5N50D , ATM3407PSA , ATM3415KPSA , ATM6402NSA , ATM7414NDH , ATM7N65ATE .
History: 12P10
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