AP4953B Datasheet. Specs and Replacement

Type Designator: AP4953B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 21.8 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: SOP8

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AP4953B datasheet

 ..1. Size:1659K  cn apm
ap4953b.pdf pdf_icon

AP4953B

AP4953B -20V P+P-Channel Enhancement Mode MOSFET Description The AP4953B uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-6.5A DS D R ... See More ⇒

 8.1. Size:92K  ape
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AP4953B

AP4953GM-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 RoHS Compliant S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G... See More ⇒

 8.2. Size:201K  ape
ap4953gm.pdf pdf_icon

AP4953B

AP4953GM RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -30V D2 D2 Low Gate Charge RDS(ON) 53m D1 D1 Fast Switching ID -5A G2 S2 G1 SO-8 S1 D2 Description D1 Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G2 G1 ruggedized device ... See More ⇒

 8.3. Size:2366K  allpower
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AP4953B

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Detailed specifications: AP4407B, AP4409A, AP4435A, AP4435B, AP45P06D, AP45P06NF, AP4606C, AP4953A, IRFB4115, AP5N40D, AP5N50BD, AP5N50D, ATM3407PSA, ATM3415KPSA, ATM6402NSA, ATM7414NDH, ATM7N65ATE

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